1/10 september 2002 stp45nf06l STB45NF06L n-channel 60v - 0.022 w -38ato-220/d 2 pak stripfet? ii power mosfet (1) i sd 38a, di/dt 300a/s, v dd v (br)dss ,t j t jmax. n typical r ds (on) = 0.022 w n exceptional dv/dt capability n logic level gate drive description this power mosfet is the latest development of stmicroelectronics unique single feature size ? strip-based process. the resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n high-efficiency dc-dc converters n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d stp45nf06l STB45NF06L 60 v 60 v < 0.028 w < 0.028 w 38 a 38 a symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain-gate voltage (r gs =20k w ) 60 v v gs gate- source voltage 16 v i d drain current (continuos) at t c = 25c 38 a i d drain current (continuos) at t c = 100c 26 a i dm ( ) drain current (pulsed) 152 a p tot total dissipation at t c = 25c 80 w derating factor 0.53 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C55 to 175 c t j max. operating junction temperature d 2 pak 1 3 1 2 3 to-220 internal schematic diagram
stp45nf06l - STB45NF06L 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.87 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 38 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 135 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs =5v,i d =19a 0.024 0.03 w v gs =10v,i d =19a 0.022 0.028 symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d =19 a 24 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1600 pf c oss output capacitance 217 pf c rss reverse transfer capacitance 62 pf
3/10 stp45nf06l - STB45NF06L electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =30v,i d =19a r g = 4.7 w v gs =10v (see test circuit, figure 3) 30 ns t r rise time 105 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v,i d = 38a, v gs =5v 23 7 10 31 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 30v, i d =19a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 65 25 ns ns t d(off) off-voltage rise time vclamp =48v, i d =38a r g =4.7 w, v gs = 10v 50 ns t f fall time (see test circuit, figure 5) 55 ns t c cross-over time 85 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 38 a i sdm (2) source-drain current (pulsed) 152 a v sd (1) forward on voltage i sd = 38a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 38a, di/dt = 100a/s, v dd =100v,t j =150c (see test circuit, figure 5) 70 110 4 ns nc a thermal impedence safe operating area
stp45nf06l - STB45NF06L 4/10 output characteristics gate charge vs gate-source voltage transconductance static drain-source on resistance transfer characteristics capacitance variations
5/10 stp45nf06l - STB45NF06L normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature
stp45nf06l - STB45NF06L 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/10 stp45nf06l - STB45NF06L dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp45nf06l - STB45NF06L 8/10 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
9/10 stp45nf06l - STB45NF06L tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp45nf06l - STB45NF06L 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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